... double voltage rating 双额定电压 drain breakdown voltage 漏击穿电压 drain voltage 漏电压 ...
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gate-drain breakdown voltage 栅漏击穿电压
gate to drain breakdown voltage 栅漏击穿电压
drain gate breakdown voltage 漏栅极击穿电压
drain source breakdown voltage 漏源极击穿电压
So how to design a MOSFET with suitable drain breakdown voltage to meet the application requirement for the detail circuits in the integration circuits after we deeply understand the drain breakdown mechanism of MOSFET is very important.
所以我们在正确地理解金属氧化物半导体晶体管器件的漏极击穿机制的基础上,如何设计一个具有合适的漏极击穿电压的金属氧化物半导体晶体管器件来满足实际电路的应用需求就显得非常重要。
参考来源 - 提升高压PMOS漏极击穿电压的工艺改进方法·2,447,543篇论文数据，部分数据来源于NoteExpress
The measurement has shown that the devices have higher associated gain, higher gate-drain breakdown voltage and lower noise figure.
测试表明，器件具有高增益、高栅-漏击穿及低噪声特性。
However, the peak of field plate electronic field will increase with the drain voltage until device is breakdown.
而场板电场峰值则随着漏电压的增大不断增大，直至器件击穿。
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